A large amount of research is focused today on wide-bandgap materials, especially the SiC and III-nitrides for applications such as photodiodes, LEDs and laser diodes. Materials characterization is important in development, and photoluminescence (PL) studies reveal information about epitaxial structures before the costly processing steps are performed on the device.
For photoluminescence to occur, the laser excitation needs to have a higher energy than the bandgap of the material being studied. Other lasers commonly used for PL include the frequency doubled Argon ion (244nm), Nd:YAG (266nm), HeCd (325nm) and Nd:YAG (355nm). The Photon Systems hollow cathode DUV lasers at 224.3nm and 248.6nm have photon energies of 5.5eV and 5.0eV, which makes it them some of the highest photon energy lasers sources available in a compact size.
Short Wavelength Required
Laser excitation needs to have a higher energy than the bandgap of the material being studied.
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