Wide Bandgap Semiconductor Photoluminescence Testing

A large amount of research is focused today on wide-bandgap materials,  especially  the SiC and III-nitrides for applications such as photodiodes, LEDs and laser diodes.  Materials characterization is important in development, and photoluminescence (PL) studies reveal information about epitaxial structures before the costly processing steps are performed on the device.

For photoluminescence to occur, the laser excitation needs to have a higher energy than the bandgap of the material being studied.  Other lasers commonly used for PL include the frequency doubled Argon ion (244nm), Nd:YAG (266nm), HeCd (325nm) and Nd:YAG (355nm).   The Photon Systems hollow cathode DUV lasers at 224.3nm and 248.6nm have photon energies of 5.5eV and 5.0eV, which makes it them some of the highest photon energy lasers sources available in a compact size.

 

 

PL Scan1

Key Issues

  • Short Wavelength Required

    Laser excitation needs to have a higher energy than the bandgap of the material being studied.

Downloads

Mini PL/Raman

The most compact and lowest cost deep UV (224 or 248.6nm) photoluminescence and Raman spectrometer system.

Get In Touch

Keep informed about the latest deep UV developments at Photon Systems by joining our mailing list.

ADDRESS

1512 Industrial Park St. Covina, CA 91722-3417

PHONE

626 967-6431

Contact Us

  • This field is for validation purposes and should be left unchanged.